creat by art - high efficiency, low vf. - high current capavility - high reliability - high surge current capability - low power loss. - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - (green compound) halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 50 100 150 200 300 400 500 600 v v rms 35 70 105 140 210 280 350 420 v v dc 50 100 150 200 300 400 500 600 v i f(av) a trr ns cj pf r jc o c/w t j o c t stg o c document number: ds_d1405030 version: l14 SFF1001G thru sff1008g taiwan semiconductor isolated glass passivated su p er fast rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: ito-220ab polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol sff 1001g sff 1002g sff 1003g sff 1004g sff 1005g sff 1006g sff 1007g sff 1008g unit v maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 10 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 125 a 400 maximum reverse recovery time (note 2) 35 a maximum instantaneous forward voltage (note 1) i f = 5a v f 0.975 1.3 1.7 2 operating junction temperature range - 55 to +150 maximum reverse current @ rated v r t j =25 t j =125 i r 10 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a. note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. ito-220ab 70 50 typical junction capacitance (note 3) typical thermal resistance
part no. part no. sff1008g sff1008g sff1008g (ta=25 unless otherwise noted) document number: ds_d1405030 version: l14 SFF1001G thru sff1008g taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing sff100xg (note 1) prefix "h" c0 suffix "g" ito-220ab 50 / tube note 1: "x" defines voltage from 50v (SFF1001G) to 600v (sff1008g) example preferred p/n aec-q101 qualified packing code green compound code description sff1008g c0 c0 sff1008g c0g c0 g green compound sff1008ghc0 h c0 aec-q101 qualified ratings and characteristics curves 0 2 4 6 8 10 12 0 25 50 75 100 125 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resister or inductive load with heatsink 0 30 60 90 120 150 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics tj=25 tj=100 tj=75 0.01 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics pulse width=300 s 1% duty cycle SFF1001G-sff1004g sff1005g-sff1006g sff1007g-sff1008g
min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1405030 version: l14 marking diagram SFF1001G thru sff1008g taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 40 50 60 70 80 90 100 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance SFF1001G-sff1004g sff1005g-sff1008g f=1.0mhz vsig=50mvp-p
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1405030 version: l14 SFF1001G thru sff1008g taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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